BUK7227-100B,118

$1.92

Description：MOSFET N-CH 100V 48A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fe2401bc7a8b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 48A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2789 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7227-100B,118

Overview

The BUK7227-100B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 100 V and a continuous drain current of 48 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 23 mΩ at 25 °C and supports junction temperatures up to 185 °C. It includes an internal source-drain diode with a reverse recovery time of 94 ns and total gate charge of 37 nC.

Feature Summary

AEC Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Operates in thermally demanding environments up to 185 °C

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS and REACH compliance standards for the target market. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet to maintain junction temperature within the specified 185 °C limit during operation.

Selection Notes

Select this component for high-current switching applications requiring robust automotive qualification. The standard level gate drive compatibility simplifies driver circuit design. Consider the 185 °C junction temperature rating for high-thermal-stress environments. Evaluate the 100 V breakdown voltage against system transient requirements to ensure adequate safety margins.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is housed in the SOT428 (DPAK) surface-mount package, which provides a mounting base connected to the drain for efficient heat dissipation. The product is qualified for automotive use, distinguishing it from general-purpose industrial variants.