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Product Detailed Parameters
- Description：MOSFET N-CH 55V 32.3A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：32.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：872 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：77W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7237-55A,118 is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a 55 V drain-source voltage rating and supports continuous drain currents up to 32.3 A at 25 °C mounting base temperature. The device exhibits low on-state resistance of 37 mΩ at 25 °C and 74 mΩ at 175 °C junction temperature under 25 A conditions. Total power dissipation reaches 77 W at 25 °C. It includes avalanche ruggedness with 49 mJ non-repetitive energy capability and operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Low conduction losses achieved through minimized on-state resistance values
- Qualified for use in thermally demanding environments due to high junction temperature rating
- Compatible with standard level gate drive sources for simplified circuit integration
Applications
- 12 V and 24 V load switching
- Automotive power switching systems
- General purpose power control
- Motor, lamp, and solenoid driving
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets current AEC-Q101 qualification standards for the target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance limits during operation.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities. Consider the 55 V breakdown voltage and low RDS(on) characteristics for efficient power management. Evaluate thermal performance against the 77 W dissipation limit and ensure adequate heat sinking for sustained loads.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology for enhanced performance. It is housed in a DPAK (SOT428) plastic surface-mounted package. The device is specifically engineered to meet automotive reliability standards, making it suitable for critical vehicle electronics where durability and consistent electrical characteristics are mandatory.
Replacement Considerations
Direct substitutes include BUK7237-55A variants from other manufacturers if pinout and electrical specifications align. Verify compatibility regarding gate threshold voltage and thermal resistance before substitution.
