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Product Detailed Parameters
- Description：MOSFET N-CH 100V 34A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2293 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7240-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 100 mΩ at 175 °C junction temperature. Total power dissipation reaches 114 W at 25 °C. It supports a junction temperature range from -55 °C to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 122.5 mJ.
Feature Summary
- Compliant with AEC Q101 standards for automotive critical applications
- Low conduction losses enabled by low on-state resistance
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with standard gate drive compatibility. Consider the 100 mΩ maximum on-state resistance at elevated temperatures for efficiency calculations. Evaluate the 175 °C junction temperature rating against your system's thermal constraints and ensure adequate heat sinking for the specified power dissipation levels.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. It utilizes advanced trench gate technology to achieve low on-state resistance within a plastic DPAK (SOT428) surface-mounted package. The device is specifically engineered for high-performance automotive applications requiring reliability and thermal stability.
Replacement Considerations
Consult official Nexperia documentation for verified equivalent parts. Cross-reference key parameters such as voltage ratings, current capabilities, and package dimensions before substitution.
