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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3760 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK724R5-30C,118 is an N-channel TrenchMOS standard level FET designed for high-performance automotive applications. It features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C. The device exhibits a maximum on-state resistance of 4.5 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 157 W at a mounting base temperature of 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 329 mJ.
Feature Summary
- AEC Q101 compliant for automotive reliability
- Avalanche robust design for inductive load switching
- Optimized for standard level gate drive sources
- Thermal stability rated for environments up to 175°C
Applications
- 12V Motor, lamp and solenoid loads
- High performance automotive power systems
- High performance Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target automotive application. Cross-reference the datasheet revision date to ensure compatibility with your design constraints and thermal management requirements.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with standard logic-level gate drive capabilities. The low on-state resistance minimizes conduction losses in high-current scenarios. Ensure the thermal design accommodates the specified junction-to-mounting base thermal resistance to maintain operation within the 175 °C limit during peak load conditions.
Part Context
This part belongs to Nexperia's BUK72 series of N-channel TrenchMOS FETs. These devices utilize advanced trench technology to deliver high efficiency through reduced switching and conduction losses. The series is specifically engineered to meet the rigorous demands of modern automotive electronics, offering a balance of electrical performance and thermal durability.
Replacement Considerations
Consult the official Nexperia replacement guide or contact technical support for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying absolute maximum ratings and thermal characteristics.
