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The BUK7506-55A,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 300 W under the same conditions. Static characteristics include a maximum on-state resistance of 13.2 mΩ at 175 °C junction temperature and 6.3 mΩ at 25 °C. It is qualified to AEC-Q101 standards for automotive applications.
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Select this component when designing circuits requiring high current handling capabilities up to 75 A with low conduction losses. Ensure the thermal management solution can handle the 300 W power dissipation rating at the specified mounting base temperature. Verify that the gate drive circuitry aligns with the standard level requirements and that the operating junction temperature remains within the -55 °C to 175 °C range for reliable performance.
This part belongs to Nexperia's BUK75 series of N-channel TrenchMOS FETs. These devices are designed for robust power switching applications. The TO-220AB package provides a heatsink-mounted configuration with a single mounting hole, facilitating efficient thermal transfer from the junction to the mounting base. The internal connection of the mounting base to the drain simplifies circuit layout and thermal design.
Check datasheets for alternative parts offering compatible 55 V drain-source voltage and similar current ratings. Ensure replacement components match the TO-220AB pinout (Gate, Drain, Source) and thermal resistance characteristics to maintain system performance without redesigning the PCB or heatsink interface.