BUK7506-55A,127

BUK7506-55A,127

  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tube

SKU:c081830d945f Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

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BUK7506-55A,127

Overview

The BUK7506-55A,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 300 W under the same conditions. Static characteristics include a maximum on-state resistance of 13.2 mΩ at 175 °C junction temperature and 6.3 mΩ at 25 °C. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

  • Low conduction losses achieved through low on-state resistance
  • Compatible with standard level gate drive sources
  • Operates in thermally demanding environments with a 175 °C rating
  • Qualified for automotive critical applications per AEC-Q101

Applications

  • 12 V and 24 V loads
  • Automotive and general purpose power switching
  • Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current handling capabilities up to 75 A with low conduction losses. Ensure the thermal management solution can handle the 300 W power dissipation rating at the specified mounting base temperature. Verify that the gate drive circuitry aligns with the standard level requirements and that the operating junction temperature remains within the -55 °C to 175 °C range for reliable performance.

Part Context

This part belongs to Nexperia's BUK75 series of N-channel TrenchMOS FETs. These devices are designed for robust power switching applications. The TO-220AB package provides a heatsink-mounted configuration with a single mounting hole, facilitating efficient thermal transfer from the junction to the mounting base. The internal connection of the mounting base to the drain simplifies circuit layout and thermal design.

Replacement Considerations

Check datasheets for alternative parts offering compatible 55 V drain-source voltage and similar current ratings. Ensure replacement components match the TO-220AB pinout (Gate, Drain, Source) and thermal resistance characteristics to maintain system performance without redesigning the PCB or heatsink interface.

BUK7506-55A,127BUK7506-55A,127

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