BUK7508-40B,127

Description：MOSFET N-CH 40V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:95f65a4612ee Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2689 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7508-40B,127

Overview

The BUK7508-40B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.68 mΩ at 25 °C and supports junction temperatures up to 175 °C with a total power dissipation of 157 W.

Feature Summary

AEC-Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Compatible with standard level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm the manufacturer source is Nexperia or authorized distributor. Check for recent product change notifications regarding manufacturing location or material composition updates. Ensure the component status remains active before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with standard logic-level gate drive compatibility. The TO-220AB package facilitates heatsink mounting for high-power thermal management. Verify that the application voltage does not exceed the 40 V drain-source rating under all operating conditions.

Part Context

This part belongs to the BUK7508 series of N-channel TrenchMOS FETs. It is manufactured by Nexperia (formerly NXP Semiconductors) and utilizes silicon planar trench technology. The device is specifically qualified for automotive applications, ensuring reliability in harsh electrical and thermal environments typical of vehicle electronics.