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The BUK7508-55A is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits low on-state resistance, measuring 6.88 mΩ at 25 °C and 16 mΩ at 175 °C under specified conditions. Total power dissipation reaches 254 W at 25 °C. It includes avalanche ruggedness with a non-repetitive energy rating of 670 mJ.
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Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. Ensure the gate drive source aligns with standard level requirements. Verify that the mounting base temperature remains within limits to sustain the 75 A continuous current rating. Consider the package's thermal resistance when designing heat dissipation strategies for sustained operation.
This part belongs to Nexperia's TrenchMOS technology family, utilizing standard level enhancement mode field-effect transistor architecture. It is housed in a TO-220AB plastic single-ended package (SOT78) with a heatsink mount. The product was originally developed by NXP Semiconductors before transitioning to Nexperia, maintaining its status as a production data sheet item suitable for industrial and automotive sectors.
Publicly confirmed substitute part numbers are not provided in the source material.