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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3093 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7511-55A,127 is an N-channel TrenchMOS standard level field-effect transistor manufactured by NXP Semiconductors. It is housed in a TO-220AB through-hole package and rated for a drain-source voltage of 55 V. The device supports a continuous drain current of 75 A at case temperature and can dissipate 166 W under the same thermal conditions. Designed for robust performance, it features low on-state resistance to minimize conduction losses. The component complies with the Q101 automotive qualification standard, ensuring reliability in demanding environments.
Feature Summary
- Low conduction losses due to low on-state resistance
- Q101 compliant for automotive reliability
- Suitable for standard level gate drive sources
Applications
- Industrial control systems
- Automotive applications
Procurement Notes
Verify the specific ordering suffix ',127' to confirm the tube packaging format. Confirm the manufacturer as NXP Semiconductors or Nexperia, as corporate entities may have merged. Check for obsolete status, as this part number may no longer be actively manufactured. Ensure the TO-220AB package matches your PCB footprint requirements before procurement.
Selection Notes
Select this component when a 55 V N-channel MOSFET with high current capability is required. The TO-220AB package facilitates through-hole mounting and heatsinking. Consider the Q101 compliance if the application demands automotive-grade reliability. Verify that the gate drive voltage aligns with the standard level FET specifications for optimal switching performance.
Part Context
This part belongs to the BUK75xx series of N-channel TrenchMOS power MOSFETs from NXP Semiconductors. These devices are engineered for general-purpose switching applications requiring low on-resistance and high current handling. The series utilizes trench technology to achieve superior performance compared to planar structures, making them suitable for efficient power management solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official NXP/Nexperia selection guides for direct replacements or verify equivalents based on matching electrical parameters such as Vds, Id, Rds(on), and package type.
