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Product Detailed Parameters
- Description：PFET, 73A I(D), 55V, 0.014OHM, 1
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2.464 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7514-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 73 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 14 mΩ at 25 °C and supports a peak drain current of 266 A. Total power dissipation reaches 166 W, with a non-repetitive avalanche energy rating of 125 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Low conduction losses achieved through low on-state resistance
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix to confirm package type and reel/tube configuration. Confirm RoHS compliance status and check for any recent product change notices or end-of-life announcements from Nexperia before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high current handling in automotive environments. Ensure thermal management solutions account for the junction-to-mounting base thermal resistance. Verify gate drive requirements align with the specified threshold voltage characteristics across the operating temperature range.
Part Context
This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS standard level FETs. These devices are designed for robust performance in power switching applications, combining low on-resistance with high current capability within a standard TO-220AB package suitable for heatsink mounting.
Replacement Considerations
Consult official Nexperia documentation for qualified alternatives. Cross-reference pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) when evaluating substitute components.
