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The BUK7515-100A is an N-channel enhancement mode standard level field-effect power transistor utilizing TrenchMOS technology. It features a low on-state resistance of 15 mΩ at VGS = 10V and supports a continuous drain current of 75 A. The device offers a drain-source voltage rating of 100 V and total power dissipation of 230 W. Designed for automotive and general purpose switching, it operates with a junction temperature up to 175 °C and includes avalanche robustness.
Verify the component status as this specification originates from Philips Semiconductors. Confirm that the TO-220AB (SOT78) package dimensions and pinout match your board layout requirements. Ensure thermal management solutions account for the specified junction-to-mounting base thermal resistance values during high-current operation.
Select this component when a standard level gate drive is available and high current handling is required. The 100 V rating suits 12 V and 24 V systems. Consider the TO-220AB package for through-hole mounting and effective heat sinking compared to surface mount alternatives.
This part belongs to the TrenchMOS family of N-channel MOSFETs designed for robust performance in power switching applications. The series emphasizes low conduction losses and high thermal endurance, making it suitable for critical automotive and industrial power distribution tasks requiring reliable high-current switching.
Check for equivalents within the BUK75xx-100A series or other Nexperia/Philips TO-220 N-channel MOSFETs with matching 100 V and ~15 mΩ specifications. Verify pinout compatibility and thermal resistance characteristics before substitution.