BUK751R8-40E,127

Overview

The BUK751R8-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a TO-220AB (SOT78A) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.8 mΩ at 25 °C and 3.4 mΩ at 175 °C junction temperature. Total power dissipation reaches 349 W under specified conditions. The component supports a junction temperature range from -55 °C to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Compliant with AEC Q101 automotive qualification standards
• Rated for operation in thermally demanding environments up to 175 °C
• Features true standard level gate drive with threshold voltage greater than 1 V at 175 °C
• Capable of handling repetitive avalanche energy events

Applications

• 12 V Automotive systems
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm exact packaging or marking variations. Confirm that the TO-220AB package dimensions align with the target heatsink interface requirements. Ensure the application design accounts for the thermal resistance characteristics provided in the datasheet to maintain junction temperatures within the specified operational limits during high-current switching cycles.

Selection Notes

Select this component for high-current automotive applications requiring robust avalanche ruggedness and low on-state resistance. The standard level gate drive simplifies driver circuit design while maintaining performance at elevated temperatures. Consider the TO-220AB package for applications necessitating direct heatsink mounting and efficient thermal management under continuous load conditions.

Part Context

This part belongs to Nexperia's BUK751 series of N-channel TrenchMOS FETs. These devices are engineered for high-performance automotive power switching tasks. The series emphasizes reliability through AEC-Q101 qualification and advanced trench technology to minimize conduction losses while supporting extreme thermal environments typical in modern vehicle electrical architectures.

Replacement Considerations

Direct substitutes include other Nexperia BUK751 series variants with compatible pinouts and similar electrical ratings. Verify that any replacement maintains the 40 V drain-source voltage and 120 A current capacity. Ensure the alternative device supports the required TO-220AB package form factor for mechanical compatibility.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The device can withstand a non-repetitive drain-source avalanche energy of 1020 mJ under specified test conditions.

How does the gate-source threshold voltage behave at high temperatures?

The true standard level gate ensures a threshold voltage rating of greater than 1 V even at a junction temperature of 175 °C.