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Product Detailed Parameters
- Description：MOSFET N-CH 75V 53A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
BUK7523-75A,127 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a TO-220AB plastic package (SOT78A). The device features a drain-source voltage of 75 V and a continuous drain current of 53 A at 25 °C mounting base temperature. Total power dissipation reaches 138 W under the same conditions. The on-state resistance is specified at 23 mΩ at 25 °C and 49 mΩ at 175 °C junction temperature. It supports a peak drain current of 213 A and non-repetitive avalanche energy of 120 mJ.
Feature Summary
- Compliant with AEC Q101 standards for automotive critical applications
- Low conduction losses resulting from low on-state resistance
- Compatible with standard level gate drive sources
- Rated for thermally demanding environments up to 175 °C
Applications
- Switching 12 V, 24 V and 42 V loads
- Automotive power switching circuits
- General purpose power switching
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or verified supply chain channels. Confirm that the ordering suffix matches the required package variant. Ensure design compliance with absolute maximum ratings to prevent permanent damage. Review the most recent product data sheet for any specification updates prior to finalizing designs.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance. The TO-220AB package facilitates heatsink mounting for effective heat dissipation. Verify gate drive compatibility with standard logic levels. Consider the 175 °C junction temperature rating for operation in elevated ambient temperatures.
Part Context
The BUK7523-75A belongs to the Nexperia TrenchMOS family of N-channel enhancement mode FETs. Originally developed under NXP Semiconductors, the product line transitioned to Nexperia in 2017. This specific part is designed for automotive and industrial markets, emphasizing reliability and efficiency in power management systems.
Replacement Considerations
Consult official Nexperia documentation for qualified substitute part numbers. Cross-reference specifications such as RDSon, VDS, and package dimensions when evaluating alternatives. Ensure any replacement maintains AEC Q101 compliance if used in automotive contexts.
