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Product Detailed Parameters
- Description：MOSFET N-CH 55V 45A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：103W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7524-55,127 is an N-channel enhancement mode standard level field-effect power transistor manufactured by NXP USA Inc. It utilizes TrenchMOS technology to achieve very low on-state resistance and features integral Zener diodes for ESD protection up to 2kV. The device is housed in a TO-220AB plastic envelope (SOT78) with a tab drain configuration. Key electrical parameters include a maximum drain-source voltage of 55 V, a DC drain current of 45 A at 25°C mounting base temperature, and a typical drain-source on-state resistance of 24 mΩ at VGS = 10 V. Total power dissipation reaches 103 W under the same conditions.
Feature Summary
- TrenchMOS technology providing very low on-state resistance
- Integral Zener diodes offering electrostatic discharge protection up to 2 kV
- Tab drain pin configuration for efficient thermal management
Applications
- Automotive switching applications
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging format. Confirm that the component status aligns with current production availability as specifications may be subject to change without notice. Ensure proper handling precautions are observed due to the sensitivity of the MOS gate oxide to electrostatic discharge during installation.
Selection Notes
Select this component for designs requiring robust N-channel switching capabilities within a 55 V system. Consider the thermal resistance characteristics when designing heat sinks, particularly noting the junction-to-mounting base resistance. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic drive levels for reliable turn-on across the operating temperature range.
Part Context
This part belongs to the Philips Semiconductors product specification line, now managed by NXP. It represents a standard level FET designed for high-current applications. The TO-220AB package facilitates direct mounting to heatsinks, making it suitable for power stages where thermal performance is critical. The device integrates protection features commonly required in automotive environments.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pin configurations and absolute maximum ratings before implementation.
