BUK7526-100B,127

Description：MOSFET N-CH 100V 49A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:fbf8440347a8 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 49A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2891 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7526-100B,127

Overview

The BUK7526-100B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 22 mΩ at 25 A and supports a total power dissipation of 157 W. Designed for automotive critical applications, it complies with AEC-Q101 standards and operates with junction temperatures up to 175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Compatible with standard level gate drive sources
Suitable for thermally demanding environments with 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current design requirements, as product availability may change. Ensure the selected part meets all environmental and electrical specifications for the intended application before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring robust performance in automotive environments. Consider the thermal resistance characteristics when designing heat sinking solutions. Verify gate drive compatibility with standard level logic. Evaluate the avalanche ruggedness capabilities if the application involves inductive load switching or transient energy handling.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed for high-efficiency power switching. It integrates advanced trench gate technology to minimize conduction losses while maintaining fast switching speeds. The TO-220AB package facilitates efficient heat dissipation through the mounting base, supporting high-power applications in compact form factors.