BUK7528-55A,127

$0.31

Description：PFET, 42A I(D), 55V, 0.028OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:8878763b4443 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：PFET, 42A I(D), 55V, 0.028OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1165 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：99W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK7528-55A,127

Overview

The BUK7528-55A,127 is a single N-channel Power MOSFET manufactured by Nexperia. It utilizes silicon technology and features a rail power MOS architecture housed in a tube package. The device has a drain-source breakdown voltage (Vds) of 55 V. The standard factory packaging quantity is 1000 units per tube. The component weighs approximately 2 grams.

Feature Summary

Rail power MOS architecture for efficient switching
Silicon-based construction for reliable performance

Applications

General purpose power switching
DC-to-DC converter circuits

Procurement Notes

Verify current lifecycle status as the component is listed as obsolete or end-of-life with potential manufacturer discontinuation. Confirm availability through authorized distributors, noting that supply may be restricted or limited in certain regions. Ensure compliance with RoHS requirements before finalizing procurement plans.

Selection Notes

Select this component for applications requiring a 55 V rated N-channel MOSFET in a tube package. Consider the 55 V drain-source breakdown voltage limit when designing circuits. Verify that the tube packaging format aligns with assembly line requirements and that the silicon technology meets thermal and electrical specifications for the intended load conditions.

Part Context

This part belongs to the Nexperia BUK75 series of rail power MOSFETs. These devices are designed for general-purpose switching applications. The specific suffix indicates the tube packaging variant. The series is characterized by its silicon construction and standardized pin configurations suitable for surface mount or through-hole integration depending on the specific package type.