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Product Detailed Parameters
- Description：PFET, 100A I(D), 40V, 0.0023OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：175 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11.323 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：333W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK752R3-40C is an N-channel TrenchMOS standard level FET designed for high-performance automotive applications. It features a 40 V drain-source voltage rating and supports continuous drain currents up to 100 A at 25°C mounting base temperature, with peak pulsed current reaching 1104 A. The device exhibits a typical on-state resistance of 1.96 mΩ at 25°C and 2.3 mΩ maximum. It handles total power dissipation of 333 W and includes avalanche ruggedness rated at 1.2 J non-repetitive energy. Operating junction temperatures range from -55°C to 175°C.
Feature Summary
- AEC Q101 compliant for automotive reliability
- Advanced TrenchMOS technology for low on-resistance
- Suitable for standard level gate drive
- Robust avalanche performance
Applications
- 12V Motor loads
- Lamp loads
- Solenoid loads
- High performance automotive power systems
- High performance Pulse Width Modulation applications
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the latest AEC-Q101 qualification standards required for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component when a 40 V N-channel MOSFET with high current capability is required for automotive environments. The standard level gate drive compatibility simplifies driver circuit design. Consider the thermal resistance characteristics and safe operating area limits when designing heat sinking solutions for continuous or pulsed load operations.
Part Context
This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS power MOSFETs. These devices are engineered using advanced trench gate technology to achieve low specific on-resistance. The series is widely utilized in automotive power distribution and switching applications requiring robust performance under demanding thermal and electrical stress conditions.
Replacement Considerations
The datasheet revision history indicates that BUK752R3-40C supersedes BUK75_7E2R3-40C_2. Verify pinout and thermal characteristics match before substituting other family members.
