BUK752R7-60E,127

$1.34

Description：MOSFET N-CH 60V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:0115b697fb82 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：158 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11.18 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK752R7-60E,127

Overview

The BUK752R7-60E,127 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device is rated for a drain-source voltage of 60 V and features a continuous drain current capacity of 48 A at 25 °C case temperature. Its maximum on-resistance is specified as 2.7 mΩ at a gate-source voltage of 10 V. The component supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Incorporates TrenchMOS technology for optimized switching performance and low conduction losses.
Features true standard level gate characteristics with a threshold voltage greater than 1 V at elevated temperatures.
Rated for repetitive avalanche energy handling to withstand demanding electrical stress conditions.

Applications

12 V automotive systems
Motor control circuits
Lamp and solenoid drivers
Start-Stop micro-hybrid applications

Procurement Notes

Verify the specific ordering code suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm availability status as distribution channels may indicate end-of-life or obsolescence phases. Ensure the procurement source provides valid traceability data consistent with Nexperia manufacturing standards.

Selection Notes

Select this component for high-current switching applications requiring robust thermal performance up to 175 °C. The TO-220-3 package facilitates effective heat dissipation for power management tasks. Verify that the required gate drive voltage aligns with the standard level FET characteristics for optimal on-state resistance performance.

Part Context

This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS standard level FETs. These devices are designed for high-performance automotive applications and comply with the AEC-Q101 qualification standard. The series emphasizes reliability in thermally demanding environments while maintaining efficient power switching capabilities.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when considering equivalent components from other manufacturers to ensure compatibility with existing board layouts and cooling solutions.