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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6.808 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK753R1-40B,127 is an N-channel TrenchMOS standard level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. Designed for automotive critical applications, it complies with the AEC-Q101 qualification standard. The device utilizes TrenchMOS technology to achieve low conduction losses through minimized on-state resistance. It supports a maximum drain-source voltage of 40 V and operates reliably in thermally demanding environments with a junction temperature rating up to 175 °C. The component is suitable for standard level gate drive sources.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure the part number matches the exact ordering code required for your manufacturing line. Cross-reference with the manufacturer's longevity program to assess availability and expected order duration before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring robust performance in automotive environments with standard logic-level gate drivers. The 175 °C thermal rating makes it appropriate for high-temperature applications where standard MOSFETs might fail. Ensure the system voltage does not exceed the 40 V limit and that the gate drive characteristics align with the standard level requirements.
Part Context
This part belongs to the BUK753R1-40B series of N-channel TrenchMOS FETs. It is specifically engineered for automotive use, meeting rigorous quality standards. The series leverages advanced trench technology to balance low resistance with reliable switching capabilities, serving as a key component in modern vehicle electrical architectures.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Generic replacements may not match the AEC-Q101 qualification or thermal performance. Verify pinout compatibility and electrical parameters before substituting.
