BUK753R1-40E,127

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:bdf69d8747b0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：234W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK753R1-40E,127

Overview

The BUK753R1-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a TO-220AB (SOT78A) package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2.6 mΩ at 25 °C and supports a total power dissipation of 234 W. Qualified to the AEC-Q101 standard, it operates with junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities for robust automotive performance.

Feature Summary

Compliant with AEC-Q101 standards for high-performance automotive applications
Repetitive avalanche rated for enhanced ruggedness
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration and reel specifications. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring a standard level gate drive compatible with common logic levels while maintaining high current handling capabilities. The TO-220AB package facilitates effective heatsinking for high-power scenarios. Consider the repetitive avalanche rating when designing circuits subject to inductive load switching or transient voltage spikes.

Part Context

This part belongs to the BUK753R1-40E series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered specifically for automotive markets, offering a balance of low conduction losses and robust switching characteristics. The series utilizes advanced trench gate technology to achieve high efficiency in power conversion and switching applications.