BUK753R4-30B,127

Overview

The BUK753R4-30B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 255 W under the same conditions, with a maximum on-state resistance of 3.4 mΩ at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and includes an internal source-drain diode.

Feature Summary

• AEC Q101 compliant for automotive critical applications
• Compatible with standard level gate drive sources
• Rated for thermally demanding environments up to 175 °C

Applications

• 12 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and ensure the component meets the required AEC-Q101 qualification standards for your target application environment before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities in a single-ended heatsink-mounted package. Ensure the thermal management solution can maintain the mounting base temperature within limits to support the specified 75 A continuous drain current rating.

Part Context

This part belongs to the BUK75 series of N-channel TrenchMOS FETs manufactured by NXP Semiconductors. The series is designed for robust performance in power switching applications, offering low on-state resistance and high avalanche energy capability suitable for inductive load control.

Replacement Considerations

S9S12GA128F0CLH is listed as a parameter equivalent substitute.