ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 37A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2293 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK7540-100A,127 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed for automotive and general-purpose power switching applications. The device features a drain-source voltage of 100 V and a continuous drain current of 37 A at a mounting base temperature of 25 °C. Total power dissipation reaches 138 W under the same conditions. The maximum on-state resistance is 40 mΩ at VGS = 10 V and ID = 40 A. It supports a peak drain current of 149 A and handles non-repetitive avalanche energy up to 31 mJ.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Low conduction losses achieved through low on-state resistance
- Utilizes TrenchMOS technology for enhanced performance
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official Nexperia documentation. Confirm package integrity and pin alignment prior to installation. Ensure design parameters remain within absolute maximum ratings to prevent irreversible damage. Review the latest product data sheet for any specification updates or revision history changes before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities. The TO-220AB package facilitates effective thermal management via heatsink mounting. Consider the specific gate drive requirements to ensure optimal RDS(on) performance. Evaluate thermal resistance characteristics to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This part belongs to the BUK75 series of N-channel TrenchMOS FETs manufactured by Nexperia, formerly NXP Semiconductors. The series focuses on providing reliable power switching solutions for demanding environments. The BUK7540-100A variant specifically targets applications needing 100 V breakdown voltage with substantial current capacity in a standard through-hole package.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference electrical parameters such as RDS(on), VDS, and package dimensions to ensure compatibility.
