BUK754R3-75C,127

$1.16

Description：MOSFET N-CH 75V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:959d377a166e Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：142 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11.659 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：333W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK754R3-75C,127

Overview

The BUK754R3-75C is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it features AEC Q101 compliance and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 75 V, continuous drain current of 100 A at 25 °C mounting base temperature, and total power dissipation of 333 W. The device exhibits a maximum on-state resistance of 4.3 mΩ at 25 °C and 9 mΩ at 175 °C. It offers high avalanche ruggedness with non-repetitive energy ratings of 630 mJ.

Feature Summary

AEC Q101 compliant for automotive reliability
Suitable for standard level gate drive sources
Operates in thermally demanding environments with 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and tape/reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the datasheet revision date to ensure all thermal and electrical characteristics align with your design requirements before finalizing procurement.

Selection Notes

Select this component for applications requiring robust N-channel switching with standard gate drive compatibility. Ensure the thermal management solution can handle the specified power dissipation limits at the expected mounting base temperature. Verify that the peak drain current and avalanche energy ratings exceed the transient demands of the load circuit to prevent device failure during startup or fault conditions.

Part Context

This part belongs to Nexperia's (formerly NXP) TrenchMOS family of standard level N-channel MOSFETs. These devices are engineered for high-current switching applications where low on-state resistance and thermal stability are critical. The TO-220AB package provides a heatsink-mounted configuration suitable for high-power density designs in automotive and industrial sectors.