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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6.23 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK754R7-60E,127 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology within a SOT78 package and is qualified to the AEC-Q101 standard for automotive applications. The device features a drain-source voltage (Vdss) of 60 V and supports junction temperatures up to 175 °C. Key electrical characteristics include a true standard level gate with a threshold voltage (Vgs(th)) rating greater than 1 V at 175 °C, ensuring reliable switching performance in thermally demanding environments.
Feature Summary
- AEC-Q101 compliant for high-performance automotive applications
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with Vgs(th) rating greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or direct channels. Confirm the specific suffix matches the required package and tape/reel specifications. Check current lifecycle status via official Nexperia longevity programs, as availability may vary based on production schedules and regional distribution agreements.
Selection Notes
Select this component for designs requiring AEC-Q101 qualification and high thermal stability. The standard level gate drive simplifies interface requirements compared to logic-level variants. Ensure the SOT78 package fits the PCB layout constraints and that the 60 V rating provides adequate headroom for the target 12 V automotive system operating conditions.
Part Context
This part belongs to the Nexperia BUK75 series of N-channel TrenchMOS FETs. The series is engineered for automotive reliability, combining low on-resistance with rugged avalanche capabilities. The specific model integrates advanced trench gate technology to optimize switching losses and thermal performance within compact surface-mount packaging suitable for modern vehicle electronics.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts, thermal resistance values, and electrical limits before replacing. Generic replacements may lack AEC-Q101 certification or identical avalanche ratings.
