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Product Detailed Parameters
- Description：PFET, 75A I(D), 40V, 0.0052OHM,
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK755R2-40B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature, limited by the package. The device offers a maximum on-state resistance of 5.2 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 203 W at 25 °C. It supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 494 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for critical applications.
- Compatible with standard level gate drive sources for simplified circuit design.
- Rated for thermally demanding environments with an extended junction temperature range up to 175 °C.
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm the component status against current Nexperia longevity programs to ensure availability for long-term production. Cross-reference the datasheet revision date with the most recent product data sheet issued by the manufacturer to ensure all electrical characteristics and thermal limits are current before finalizing design specifications.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance in automotive or industrial settings. Ensure the gate drive circuitry aligns with standard level requirements to fully utilize the low on-state resistance. Verify that the mounting base temperature remains within specified limits to maintain the rated 75 A continuous current capacity without exceeding the total power dissipation constraints.
Part Context
This part belongs to the BUK75 series of N-channel TrenchMOS FETs from Nexperia. It is housed in a 3-lead TO-220AB (SOT78A) plastic package designed for heatsink mounting. The series is engineered for general-purpose power switching, offering a balance of low conduction losses and high reliability suitable for demanding electronic environments.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers within the same family or equivalent specifications. Do not assume pinout compatibility with other TO-220 packages without verifying the specific pinning information provided in the datasheet.
