ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 23A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1210 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：99W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK7575-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 23 A at 25 °C mounting base temperature. The device operates with a junction temperature up to 175 °C and dissipates 99 W at 25 °C. On-state resistance is 64 mΩ at 25 °C and 187 mΩ at 175 °C under specified conditions. It includes non-repetitive avalanche energy capability of 100 mJ.
Feature Summary
- Low conduction losses due to low on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm that the component meets current RoHS compliance requirements as stated in the latest product data sheet revision. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for high-current switching applications requiring robust automotive qualification. The standard level gate drive compatibility simplifies driver circuit design. Evaluate thermal performance based on the provided normalized power dissipation curves relative to the mounting base temperature constraints defined in the datasheet.
Part Context
This part belongs to the BUK75 series of N-channel TrenchMOS FETs manufactured by Nexperia (formerly NXP Semiconductors). It is housed in a TO-220AB plastic single-ended package designed for heatsink mounting. The series is engineered for reliability in demanding power electronics environments.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and electrical limits before substituting.
