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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2427 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7607-30B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications with AEC-Q101 compliance, it features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 9.7 mΩ at 25 °C and supports junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to low on-state resistance
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for high-current switching applications requiring automotive qualification. Ensure the design accommodates the 75 A package-limited current rating and utilizes adequate thermal management for the 157 W dissipation capability. Confirm that the gate drive circuitry aligns with the standard level requirements for optimal performance.
Part Context
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. It is specifically engineered for robust performance in automotive environments, offering a balance of low on-resistance and high thermal stability within a surface-mount D2PAK package suitable for automated assembly processes.
Replacement Considerations
Consult official Nexperia documentation for verified direct substitutes. Cross-referencing requires matching voltage, current, and package specifications.
