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The BUK7608-40B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.68 mΩ at 25 °C and supports junction temperatures up to 175 °C.
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Select this component for high-current switching applications requiring robust thermal performance and automotive qualification. Ensure gate drive sources are compatible with standard level requirements. Consider the package's thermal resistance characteristics when designing heat dissipation solutions for continuous operation.
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. It is specifically engineered for automotive critical applications, offering a balance of low on-resistance and high current handling capabilities within a surface-mount D2PAK package suitable for automated assembly processes.
Consult official Nexperia documentation for verified substitutes. Cross-reference pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before considering alternative manufacturers or series.
Yes, the device is designed and qualified to the AEC-Q101 standard for use in automotive critical applications.
The maximum junction temperature is 175 °C.