ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：76 nC @ 0 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4352 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：254W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The BUK7608-55A is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 16 mΩ at 175 °C junction temperature. Total power dissipation reaches 254 W at 25 °C mounting base temperature, with a junction temperature rating up to 175 °C.
Feature Summary
- Low conduction losses due to low on-state resistance
- Suitable for thermally demanding environments due to 175 °C rating
- Q101 compliant for automotive use
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring robust N-channel MOSFET performance in automotive environments. Consider the 55 V drain-source voltage limit and the 75 A continuous current capability constrained by the D2PAK package. Evaluate thermal requirements against the 175 °C maximum junction temperature rating.
Part Context
This part belongs to Nexperia's TrenchMOS standard level FET portfolio. It utilizes advanced trench technology to achieve low on-resistance within a plastic surface-mounted package. The product line targets high-efficiency power switching solutions suitable for demanding industrial and automotive sectors.
Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with matching 55 V ratings and comparable RDS(on) specifications. Verify pinout compatibility with the SOT404 (D2PAK) package before substitution.
