BUK7610-55AL,118

$3.34

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1d586af705b0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：124 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7610-55AL,118

Overview

The BUK7610-55AL,118 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia General-Purpose Automotive (GPA) TrenchMOS technology. It is designed for linear operation and qualified to AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current of 75 A at Tmb=25°C, and a maximum on-state resistance of 10 mΩ at VGS=10V and ID=25A. The device supports a total power dissipation of 300 W, operates within a junction temperature range of -55°C to +175°C, and features a non-repetitive avalanche energy rating of 1.1 J.

Feature Summary

Stable operation in linear mode optimized by GPA TrenchMOS technology
Qualified for automotive critical applications per AEC-Q101 standard
Rated for high thermal environments up to 175 °C junction temperature

Applications

DC linear motor control
Automotive systems
Repetitive clamped inductive switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when linear mode stability is required alongside automotive qualification. The GPA TrenchMOS technology distinguishes it from standard switching FETs. Ensure the design accommodates the 55 V breakdown limit and verify that the mounting base temperature remains within the specified derating curves for the expected power dissipation levels.

Part Context

This part belongs to the BUK76xx series of N-channel TrenchMOS FETs manufactured by Nexperia. These devices are specifically engineered for automotive applications requiring robust performance under demanding thermal conditions. The D2PAK package provides a balance of current handling capability and surface-mount convenience for PCB integration.

Replacement Considerations

Consult official Nexperia documentation for verified substitutes. Cross-reference pinout compatibility and ensure replacement parts meet the same AEC-Q101 qualification and linear operation requirements.