BUK7611-55A,118

$1.30

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2bf55aa46ddc Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3093 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7611-55A,118

Overview

The BUK7611-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, specified as 9.1 mΩ typ at 25 °C and 22 mΩ max at 175 °C with VGS=10V and ID=25A. Total power dissipation reaches 166 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated for 211 mJ non-repetitive energy.

Feature Summary

Low conduction losses achieved through low on-state resistance
Qualified for automotive critical applications per AEC-Q101 standards
Compatible with standard level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status remains active for production use. Ensure design compliance with the absolute maximum ratings provided in the official datasheet. Check for any recent product change notices regarding marking or assembly updates before finalizing procurement specifications.

Selection Notes

Select this component for circuits requiring high current handling capabilities within a 55 V system. The D2PAK package provides a robust thermal path via the mounting base connected to the drain. Consider the thermal resistance characteristics when designing heat dissipation solutions for continuous operation near the upper temperature limits.

Part Context

This part belongs to Nexperia's BUK76xx series of N-channel TrenchMOS FETs. These devices are engineered for power switching applications where efficiency and thermal performance are critical. The series utilizes advanced trench gate technology to minimize resistive losses while maintaining reliability in automotive-grade environments.