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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2604 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7611-55B,118 is an N-channel TrenchMOS standard level FET in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 11 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 157 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the datasheet revision date to ensure all electrical characteristics and thermal limits align with your design requirements before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current capabilities in automotive or industrial settings. Ensure the gate drive circuitry provides sufficient voltage to achieve the specified low on-state resistance. Verify thermal management strategies to maintain junction temperatures within the 175 °C limit during peak load conditions and account for the package-limited continuous current constraints.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to minimize on-state resistance. The D2PAK package provides efficient thermal dissipation through a large mounting base connected to the drain. It is designed specifically for high-power density applications where reliability under harsh thermal conditions is essential.
Replacement Considerations
Consult the Nexperia product selection guide for direct replacements within the BUK76xx series. Verify pinout compatibility and thermal resistance values when substituting with other D2PAK MOSFETs from different manufacturers.
