BUK7613-100E,118

$2.63

Description：MOSFET N-CH 100V 72A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5131c5ff7642 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 72A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：97.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4533 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：182W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7613-100E,118

Overview

The BUK7613-100E,118 is an N-channel TrenchMOS standard level MOSFET in a D2PAK (SOT404) package. It features a drain-source voltage of 100 V and a continuous drain current of 72 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 13 mΩ at 10 V gate drive and 20 A drain current. Total power dissipation reaches 182 W at 25 °C. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC-Q101 qualified for automotive reliability
Repetitive avalanche rated for robustness
Suitable for thermally demanding environments with 175 °C rating
True standard level gate operation

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.

Selection Notes

Select this component when a 100 V N-channel MOSFET with high current capability is required. The standard level gate threshold simplifies driver design compared to logic-level devices. Consider the D2PAK package for its thermal performance in medium-power applications. Verify compatibility with existing PCB footprints for the SOT404 outline.

Part Context

This part belongs to Nexperia's BUK7613 series of N-channel TrenchMOS FETs. The series utilizes advanced trench technology to achieve low on-state resistance. These devices are designed for high-performance automotive applications requiring robust electrical characteristics and thermal stability.