BUK7613-60E,118

$1.31

Description：MOSFET N-CH 60V 58A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:892ed871c3de Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 58A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7613-60E,118

Overview

The BUK7613-60E,118 is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 58 A at 25 °C mounting base temperature. The device features a maximum on-state resistance of 13 mΩ at 10 V gate drive and 15 A drain current. It supports junction temperatures up to 175 °C with a total power dissipation of 96 W.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for robustness
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating greater than 1V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring a standard level N-channel MOSFET capable of handling 60 V and 58 A. Ensure the thermal management solution can support the 96 W power dissipation limit at the specified mounting base temperature. Verify that the gate drive voltage aligns with the 10 V specification for optimal RDS(on) performance.

Part Context

This part belongs to Nexperia's BUK761 series of TrenchMOS standard level FETs. These devices are engineered for high-efficiency power switching in automotive and industrial environments. The D2PAK package provides a balance of high current capability and thermal performance, making it suitable for surface-mount applications where space and heat dissipation are critical factors.

Replacement Considerations

Check pinout compatibility and electrical ratings against alternatives. Verify if substitute parts meet the same AEC-Q101 qualification and thermal characteristics. Ensure the replacement device supports the required repetitive avalanche rating and gate threshold voltage specifications for the application.