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Product Detailed Parameters
- Description：MOSFET N-CH 75V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2644 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7613-75B,118 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. utilizing TrenchMOS technology in a D2PAK plastic package (SOT404). Designed for automotive critical applications, it complies with the AEC-Q101 standard and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 75 V, a continuous drain current of 75 A at 25 °C mounting base temperature, and a maximum total power dissipation of 157 W. The device features a typical on-state resistance of 11.7 mΩ at 25 °C and 27 mΩ at 175 °C, with a gate charge of 40 nC.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- Compatible with standard level gate drive sources
- Operates reliably in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets the exact AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities within a 75 V system architecture. It is suitable for applications needing robust performance in elevated temperature environments up to 175 °C. Consider its compatibility with standard gate drivers and its low on-resistance characteristics for efficient power switching in motor or load control scenarios.
Part Context
This part belongs to the BUK7613 series of N-channel TrenchMOS FETs from Nexperia. The series is engineered for automotive-grade reliability and general power switching needs. The D2PAK package provides a balance of thermal performance and surface-mount convenience, making it a common choice for industrial and automotive power management designs.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing should strictly adhere to pinout, voltage, current, and thermal specifications defined in the datasheet.
