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Product Detailed Parameters
- Description：MOSFET N-CH 55V 65.7A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：65.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7616-55A,118 is an N-channel enhancement mode power transistor utilizing TrenchMOS technology in a SOT404 (D2-PAK) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 65.7 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 16 mΩ at 25 °C and 32 mΩ at 175 °C junction temperature. Total power dissipation reaches 138 W under standard conditions, with a rated junction temperature of 175 °C.
Feature Summary
- TrenchMOS technology for low on-state resistance
- Q101 automotive qualification compliant
- High thermal stability with 175 °C junction rating
Applications
- Automotive power switching for 12 V loads
- General purpose power switching for 24 V loads
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering suffix ',118' against the manufacturer's current documentation to confirm packaging details and availability status. Confirm that the component meets Q101 requirements if intended for automotive use. Check for any recent product change notices or lifecycle updates from NXP Semiconductors prior to finalizing procurement plans.
Selection Notes
Select this component for designs requiring high current handling in a surface-mount D2-PAK package. Ensure the thermal management solution supports the specified power dissipation limits at the expected ambient temperatures. Verify gate drive voltage compatibility with the 10 V specification for optimal RDS(on) performance.
Part Context
This part belongs to the BUK7516-55A/BUK7616-55A series of TrenchMOS standard level FETs. The BUK7616-55A variant specifically utilizes the SOT404 package, distinguishing it from the through-hole SOT78 version. These devices are designed for robust power switching applications in both automotive and general industrial environments.
Replacement Considerations
Direct replacement options include other N-channel MOSFETs with similar 55 V ratings and comparable current capabilities in a D2-PAK package. Verify pinout compatibility and thermal resistance characteristics before substitution.
