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Product Detailed Parameters
- Description：MOSFET N-CH 100V 64A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3.4 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7619-100B is an N-channel enhancement mode power Field-Effect Transistor utilizing High Performance Automotive TrenchMOS technology. It features a D2PAK (SOT404) plastic package with a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 100 V, continuous drain current up to 64 A at 25 °C, and peak drain current of 256 A. The typical on-state resistance is 17 mΩ at 25 °C, rising to 49 mΩ at 175 °C. Total power dissipation reaches 200 W at 25 °C mounting base temperature. The device supports junction temperatures from -55 °C to +175 °C and includes avalanche ruggedness rated at 222 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications.
- Compatible with standard level gate drive sources.
- Rated for operation in thermally demanding environments up to 175 °C.
- Features robust avalanche energy handling capabilities.
Applications
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
- 12 V, 24 V and 42 V loads
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest documentation before procurement. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for high-current switching applications requiring automotive reliability and standard logic-level gate compatibility. Evaluate thermal performance based on the mounting base temperature constraints and the normalized power dissipation curves provided in the datasheet. Consider the peak current capabilities for inductive load switching scenarios involving motors or solenoids.
Part Context
This part belongs to the Nexperia (formerly NXP) BUK76 series of N-channel TrenchMOS power FETs. These devices are engineered using High Performance Automotive technology to deliver low on-resistance and high current handling in surface-mounted packages suitable for PCB integration.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pinouts, thermal characteristics, and electrical limits when considering alternative components from other manufacturers.
