BUK761R6-40E,118

$4.14

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a21a7a429e60 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11340 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK761R6-40E,118

Overview

The BUK761R6-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a SOT404A (D2PAK) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.57 mΩ at 25 °C and 3 mΩ at 175 °C junction temperature. Total power dissipation reaches 349 W under specified conditions. It supports an operating junction temperature range from -55 °C to +175 °C.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for high-performance applications.
Rated for repetitive avalanche energy operation to withstand demanding electrical stress.
Designed for thermally demanding environments with a maximum junction temperature rating of 175 °C.
Features a true standard level gate threshold exceeding 1 V at elevated temperatures.

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required reel quantity and tape configuration before purchase. Confirm that the component status remains active for new designs by consulting the latest Nexperia product availability data. Ensure the requested package version aligns with the PCB footprint specifications provided in the official datasheet documentation.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade switching capabilities within a 40 V system. The low on-state resistance minimizes conduction losses in high-current paths up to 120 A. Consider the thermal resistance characteristics and available board space for the D2PAK package to ensure adequate heat dissipation for the intended load profile.

Part Context

This part belongs to the Nexperia BUK761 series of N-channel TrenchMOS FETs. These devices are engineered specifically for high-efficiency power switching in automotive environments. The series utilizes advanced trench gate technology to achieve superior performance metrics compared to planar alternatives, ensuring reliability under harsh operating conditions.