BUK761R7-40E,118

$2.81

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:643bf6a27e68 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：118 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：324W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK761R7-40E,118

Overview

The BUK761R7-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a D2PAK (SOT404A) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.6 mΩ at 25 °C and 3 mΩ at 175 °C junction temperature when driven by a 10 V gate-source voltage. Total power dissipation reaches 324 W under specified conditions. The component supports a junction temperature range from -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 automotive standards for high-performance applications
Rated for repetitive avalanche operation to withstand transient energy events
Maintains true standard level gate functionality with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for circuits requiring robust switching capabilities within 40 V limits. The low thermal resistance facilitates efficient heat transfer to the mounting base, supporting high current loads up to 120 A. Ensure the gate drive voltage aligns with the standard level requirements to optimize conduction losses across the operating temperature range.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed specifically for automotive environments. It integrates advanced trench gate technology to minimize on-state resistance while maintaining reliability under thermally demanding conditions. The SOT404A package provides a compact footprint suitable for surface-mount assembly on printed-circuit boards.

Replacement Considerations

Direct replacements must match the 40 V rating, 120 A current capacity, and SOT404A package. Verify that substitute components also meet AEC-Q101 qualification if automotive compliance is required. Check thermal resistance values to ensure equivalent heat dissipation performance.