ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 54A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1592 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：118W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The BUK7620-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 55 V and a continuous drain current of 54 A at 25 °C mounting base temperature. The device exhibits low on-state resistance of 17 mΩ at 25 °C and supports junction temperatures up to 175 °C with a total power dissipation of 118 W.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified to AEC-Q101 standards for automotive critical applications
- Compatible with standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust performance in automotive environments. Ensure the gate drive circuitry aligns with standard level requirements. Confirm thermal management strategies support the specified junction temperature limits and power dissipation capabilities under expected operating conditions.
Part Context
This part belongs to Nexperia's TrenchMOS family of standard level N-channel FETs. It is specifically engineered for high reliability in automotive systems, distinguishing itself from general-purpose counterparts through its AEC-Q101 qualification and optimized thermal characteristics for demanding operational scenarios.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume compatibility based solely on package type or generic specifications without cross-referencing electrical parameters and qualification standards.
FAQ
Is the BUK7620-55A suitable for medical or military applications?
No. The product is not designed, authorized, or warranted for use in medical, military, aircraft, space, or life support equipment where failure could result in personal injury or severe damage.
What is the maximum non-repetitive drain-source avalanche energy?
The device can withstand a non-repetitive drain-source avalanche energy of 115 mJ under specified conditions (ID = 48 A, Vsup ≤ 55 V, RGS = 50 Ω, VGS = 10 V, Tj(init) = 25 °C).
