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Product Detailed Parameters
- Description：MOSFET N-CH 55V 45A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：103W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7624-55,118 is an N-channel enhancement mode standard level field-effect power transistor utilizing TrenchMOS technology. It features a 55 V drain-source voltage and a 45 A DC drain current capability. The device integrates integral Zener diodes providing ESD protection up to 2 kV. Key electrical parameters include a maximum on-state resistance of 24 mΩ at VGS = 10 V and a total power dissipation of 103 W. It operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- TrenchMOS technology for low on-state resistance
- Integrated Zener diodes for ESD protection
- High thermal stability with extended operating temperature
Applications
- Automotive switching applications
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and tape-and-reel specifications. Confirm that the component meets all relevant automotive qualification standards required for your specific system integration before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust ESD protection and high current handling in automotive environments. Ensure the gate drive voltage supports the specified threshold characteristics and verify thermal management solutions can maintain the junction temperature within the 175 °C limit under worst-case load conditions.
Part Context
This part belongs to the Philips Semiconductors (now NXP) TrenchMOS family of standard level FETs. It is designed as a surface-mountable solution suitable for replacing older planar MOSFET technologies in space-constrained automotive and industrial PCB layouts requiring high reliability.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout compatibility, voltage ratings, and thermal resistance characteristics.
