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Product Detailed Parameters
- Description：MOSFET N-CH 100V 49A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2891 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7626-100B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. Designed for automotive critical applications, it complies with AEC Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 22 mΩ at 25 °C and supports junction temperatures up to 175 °C. It offers high avalanche ruggedness with a non-repetitive energy rating of 144 mJ.
Feature Summary
- Compliant with AEC Q101 automotive qualification standards for reliability in critical applications.
- Utilizes TrenchMOS technology to achieve low conduction losses through reduced on-state resistance.
- Compatible with standard level gate drive sources for simplified integration.
- Rated for operation in thermally demanding environments with a maximum junction temperature of 175 °C.
Applications
- Switching loads operating at 12 V, 24 V, and 42 V systems.
- Automotive electronic systems requiring qualified components.
- General purpose power switching circuits.
- Control of motors, lamps, and solenoids.
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the latest AEC Q101 qualification status as defined by Nexperia. Ensure design inputs align with the absolute maximum ratings provided in the official datasheet to prevent device stress. Cross-reference the pinout configuration with the target PCB footprint to guarantee correct orientation during assembly.
Selection Notes
Select this component when an N-channel MOSFET with 100 V blocking capability and high current handling is required for automotive or industrial use. The standard level gate threshold simplifies driver selection compared to logic-level devices. Consider the thermal resistance characteristics and mounting base connection requirements for heat dissipation planning. Verify that the application duty cycle remains within the safe operating area limits specified in the datasheet graphs.
Part Context
This part belongs to the BUK76xx series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for robust performance in power management applications. The D2PAK (SOT404) package provides efficient thermal transfer via the exposed drain pad. The series is widely used in automotive electronics due to its compliance with stringent industry reliability standards.
Replacement Considerations
Consult the official Nexperia replacement guide for verified cross-reference part numbers. Do not assume functional equivalence based solely on voltage and current ratings. Verify pin compatibility and thermal characteristics before substituting. Check for updated AEC Q101 qualification status in potential alternative components.
