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Product Detailed Parameters
- Description：MOSFET N-CH 100V 47A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7628-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. Designed for automotive critical applications, it complies with AEC Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 47 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 20 mΩ at 25 °C and supports a total power dissipation of 166 W. It features an avalanche ruggedness rating of 45 mJ under specified unclamped inductive load conditions.
Feature Summary
- Compliant with AEC Q101 automotive qualification standards for reliability in critical applications.
- Utilizes TrenchMOS technology to achieve low conduction losses through minimized on-state resistance.
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the latest AEC Q101 qualification status as defined by Nexperia. Ensure design parameters remain within the absolute maximum ratings provided in the official datasheet to prevent device stress or permanent damage during operation.
Selection Notes
Select this component for circuits requiring robust N-channel switching with high current capability. The D2PAK package facilitates efficient thermal management via the mounting base connected to the drain. Consider the gate threshold voltage characteristics and internal capacitances when designing drive circuits for optimal switching performance and efficiency.
Part Context
This part belongs to the BUK7628 series of N-channel TrenchMOS FETs manufactured by Nexperia. It is specifically engineered for surface-mount applications where space constraints and thermal performance are critical. The D2PAK (SOT404) package provides a single-ended configuration with three leads, including a dedicated mounting base for heat dissipation.
Replacement Considerations
The BUK7628-100A was previously included in the combined data sheet BUK7528_7628-100A_1. Designers should verify compatibility if substituting from older revisions or related series parts, ensuring pinout and electrical specifications align with the current product specification.
FAQ
What is the internal connection of the mounting base?
The mounting base (Pin 2) is internally connected to the drain terminal to facilitate thermal dissipation and electrical grounding.
Is this component suitable for medical or life support equipment?
No. The product is not designed, authorized, or warranted for use in medical, military, aircraft, space, or life support equipment where failure could result in personal injury or death.
