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Product Detailed Parameters
- Description：PFET, 276A I(D), 40V, 0.00375OHM
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK762R0-40C,118 is an N-channel TrenchMOS standard level Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes advanced TrenchMOS technology to achieve low on-state resistance, resulting in reduced conduction losses. The device is designed and qualified to the AEC-Q101 standard, making it suitable for automotive critical applications. It features a standard level gate drive compatibility and supports operation in thermally demanding environments with a maximum junction temperature rating of 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Rated for 175 °C thermally demanding environments
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering part number against official Nexperia documentation to ensure correct package and tape/reel configuration. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application. Check the manufacturer's longevity program information for expected availability and order timelines before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring standard level gate drive compatibility and high thermal resilience up to 175 °C. The low on-state resistance makes it efficient for power switching applications. Ensure the design accommodates the plastic package type and verify that the 12 V load requirements align with the device's voltage and current capabilities as specified in the datasheet.
Part Context
This part belongs to Nexperia's N-channel TrenchMOS standard level FET family. These devices are engineered for robust performance in automotive and general-purpose power switching environments. The TrenchMOS technology provides a balance of low conduction losses and ease of drive, while the AEC-Q101 qualification ensures suitability for critical automotive electronic systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume cross-compatibility with other MOSFET families without verifying pinout, electrical parameters, and package dimensions against the original specification.
