BUK762R4-60E,118

$4.01

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e615417c71b1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：158 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK762R4-60E,118

Overview

The BUK762R4-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.4 mΩ at 25 °C and 5.2 mΩ at 175 °C. Total power dissipation reaches 349 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC Q101 compliant for high-performance automotive applications
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with a 175 °C rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Ensure the component meets AEC-Q101 qualification requirements for your target automotive application. Cross-reference the SOT404 pinout and thermal characteristics during PCB layout design to ensure proper heat dissipation and electrical connectivity.

Selection Notes

Select this component for applications requiring high current handling and low on-state resistance in automotive environments. The standard level gate drive simplifies driver circuit design while maintaining performance at elevated temperatures. Consider the thermal resistance from junction to mounting base when designing heatsinking solutions for sustained high-power operations.

Part Context

This part belongs to Nexperia's TrenchMOS family, designed for efficiency and ruggedness. The D2PAK package provides a large mounting base connected to the drain, facilitating effective thermal management. The device integrates an intrinsic body diode suitable for inductive load switching applications common in automotive power distribution networks.