ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7130 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The BUK762R6-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a SOT404 (D2PAK) surface-mount package. Designed for high-performance automotive applications, it meets the AEC-Q101 qualification standard. The device features a drain-source voltage of 40 V and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. It offers a maximum total power dissipation of 263 W under the same conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments with a 175 °C rating
- True standard level gate with VGS(th) greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring a standard level gate drive compatible with typical automotive logic levels while maintaining high current handling. The true standard level gate ensures reliable turn-on even at elevated temperatures up to 175 °C. Consider the thermal resistance from junction to mounting base when designing heat sinks or PCB copper areas to ensure the junction temperature remains within the specified limits during operation.
Part Context
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. These devices are specifically engineered for automotive use, adhering to strict quality standards like AEC-Q101. The series utilizes advanced trench gate technology to achieve low on-state resistance and efficient switching performance, making them suitable for various power management tasks in modern vehicles.
Replacement Considerations
Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(on). Verify that any substitute also holds AEC-Q101 qualification if automotive reliability is required. Ensure the replacement package matches the SOT404 footprint and thermal characteristics to maintain board integrity.
FAQ
What is the gate-source threshold voltage at maximum operating temperature?
The gate-source threshold voltage (VGS(th)) is rated to be greater than 1 V at a junction temperature of 175 °C.
Is the device capable of handling avalanche events?
Yes, the BUK762R6-40E is repetitively avalanche rated, allowing it to withstand single-pulse avalanche energy up to 574 mJ under specified conditions.
