BUK7635-100A,118

$1.29

Description：MOSFET N-CH 100V 41A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8cf5a21ac80c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 41A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：35mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2535 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：149W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7635-100A,118

Overview

The BUK7635-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it features AEC-Q101 compliance and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 100 V, continuous drain current of 41 A at 25 °C mounting base temperature, and total power dissipation of 149 W. The device exhibits low on-state resistance, specified as 88 mΩ maximum at 175 °C junction temperature with 25 A drain current.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Capable of operation in thermally demanding environments with a 175 °C rating
Compatible with standard level gate drive sources
Low conduction losses resulting from low on-state resistance

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current design requirements, as product availability may change. Ensure that thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions. Cross-reference the latest datasheet revision to confirm no specification updates have occurred since initial qualification.

Selection Notes

Select this component when high current handling and automotive qualification are required within a D2PAK footprint. The standard level gate threshold simplifies driver interface design compared to logic-level alternatives. Evaluate thermal performance based on the provided safe operating area curves and normalized power dissipation data relative to the mounting base temperature constraints defined in the datasheet.

Part Context

This part belongs to Nexperia's BUK76xx series of N-channel TrenchMOS FETs. It shares the SOT404 package form factor with other devices in the family but is distinguished by its specific 100 V breakdown voltage and 41 A current rating capabilities. The series utilizes TrenchMOS technology to achieve low on-resistance characteristics suitable for power switching applications.