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Product Detailed Parameters
- Description：NEXPERIA BUK763R1-40B - 75A, 40V
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6808 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK763R1-40B,118 is an N-channel TrenchMOS standard level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. Designed for automotive critical applications, it complies with the AEC-Q101 standard. The device utilizes advanced TrenchMOS technology to achieve low conduction losses through minimized on-state resistance. It supports standard level gate drive sources and operates reliably in thermally demanding environments up to a maximum junction temperature of 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component for designs requiring robust performance in high-temperature automotive environments. Its compatibility with standard level gate drivers simplifies interface circuitry. Ensure thermal management strategies accommodate the 175 °C rating to maximize reliability in continuous operation scenarios.
Part Context
This part belongs to Nexperia's TrenchMOS family, which employs trench gate technology to enhance efficiency. The BUK763R1-40B variant specifically targets standard level applications within the broader portfolio of automotive-grade MOSFETs designed for durability and low loss.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference data. Do not substitute based solely on package similarity or generic voltage ratings without confirming electrical parameter alignment.
