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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4951 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：255W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK763R4-30B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device supports a total power dissipation of 255 W under the same thermal conditions. Static characteristics specify a maximum on-state resistance of 3.4 mΩ at 25 °C and 6.5 mΩ at 175 °C, both measured at 25 A with a gate-source voltage of 10 V.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Compatible with standard level gate drive sources
- Operates reliably in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm package variant and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 reliability standards for the intended automotive application. Ensure design margins account for the thermal resistance from junction to mounting base when calculating heat dissipation requirements.
Selection Notes
Select this component for circuits requiring robust performance in high-current automotive environments. The low on-state resistance minimizes conduction losses, while the 175 °C junction temperature rating provides headroom for thermal management. Verify that the gate drive voltage aligns with the standard level specification to ensure optimal switching performance and minimal resistance.
Part Context
This part belongs to Nexperia's BUK763 series of N-channel TrenchMOS FETs. It is housed in the SOT404 (D2PAK) surface-mount package, which features a dedicated mounting base connected to the drain for efficient heat transfer. The series is engineered for high-performance automotive applications requiring reliable power switching capabilities.
Replacement Considerations
Consult official Nexperia substitution guides or datasheets for verified equivalent parts. Do not assume compatibility based solely on pinout or voltage ratings; verify thermal characteristics and avalanche ruggedness limits.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 1.3 J, specified at a drain current of 75 A, supply voltage up to 30 V, and an initial junction temperature of 25 °C.
How does the on-state resistance vary with temperature?
The typical on-state resistance increases from 3.4 mΩ at 25 °C to 6.5 mΩ at 175 °C, measured at a constant drain current of 25 A and gate-source voltage of 10 V.
