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Product Detailed Parameters
- Description：MOSFET N-CH 100V 37A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2293 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7640-100A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It is designed for automotive critical applications and complies with AEC-Q101 standards. The device features a D2PAK (SOT404) plastic package with three leads, including a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of 37 A at 25 °C, and a maximum total power dissipation of 138 W. The typical on-state resistance is 40 mΩ at 25 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Utilizes TrenchMOS technology for low conduction losses
- Designed for thermally demanding environments
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest documentation before procurement. Confirm that the component meets the required AEC-Q101 qualification status for the intended automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.
Selection Notes
Select this component for circuits requiring robust N-channel switching with high current capabilities in automotive or general power applications. Consider the 100 V drain-source voltage rating and 37 A continuous current capacity when designing load switches. Evaluate the thermal performance based on the mounting base temperature and ensure adequate heat sinking to maintain junction temperatures within the specified limits.
Part Context
This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. These devices are engineered for high-performance automotive applications, offering a balance of low on-state resistance and ruggedness. The series supports various voltage ratings and packages to accommodate diverse power switching requirements in vehicle systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Ensure any replacement matches the SOT404 package dimensions, pinout configuration, and AEC-Q101 qualification status.
