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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6776 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK764R0-55B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. Designed for automotive critical applications, it features a 55 V drain-source voltage rating and supports up to 75 A continuous drain current at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 3.4 mΩ at 25 °C and 8 mΩ at 175 °C. It operates within a junction temperature range of -55 °C to +175 °C and offers high avalanche ruggedness with a non-repetitive energy rating of 1.2 J.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to low on-state resistance
- Compatible with standard level gate drive sources
- Suitable for thermally demanding environments with 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching in automotive or industrial environments. The standard level gate drive compatibility simplifies driver selection compared to logic-level alternatives. Consider the 175 °C maximum junction temperature capability for high-thermal-stress applications where lower-rated devices might fail.
Part Context
This part belongs to the BUK76 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered using High-Performance Automotive technology to meet stringent automotive quality standards. The series provides various voltage and current ratings optimized for power switching applications in vehicle electrical systems.
Replacement Considerations
Check datasheets for other BUK76 series variants with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.
